| Autor: |
Howard C. Kirsch, P. Crabtree, Sergio A. Ajuria, James D. Hayden, Carlos A. Mazure, J. Ko, James R. Pfiester, T. Vuong, Prashant Kenkare |
| Rok vydání: |
1994 |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices. 41:56-62 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/16.259620 |
| Popis: |
We demonstrate the scaling of Poly-Encapsulated LOCOS (PELOX) for 0.35 /spl mu/m CMOS technology without detrimental effects on gate oxide and shallow source/drain junction integrity. As-grown bird's beak punchthrough is shown to fundamentally limit the scalability of LOCOS-based schemes for narrow nitride features. A quantitative comparison of bird's beak punchthrough is made between LOCOS, Poly-Buffer LOCOS (PBL), and PELOX. The PELOX scalability is emphasized by evaluating the impact of the polysilicon-sealed cavity length for narrow nitride features. We present the realization of a 1 /spl mu/m active/isolation pitch fully meeting the geometry and off-leakage requirements of 0.35 /spl mu/m CMOS technologies (VDS/spl les/5 V). This field-implant-free isolation module avoids unnecessary process complexity by successfully integrating scaled PELOX with the split well-drive-in scheme. A highlight of this new approach is that the NMOSFET characteristics are largely width-independent down to 0.3 /spl mu/m dimensions. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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