SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max

Autor:	L. Perraud, John A. Ott, S.J. Koester, C. S. Webster, P.R. de la Houssaye, R. Hammond, I. Lagnado, J. O. Chu, Keith Jenkins, Patricia M. Mooney
Rok vydání:	2001
Předmět:	Power gain Materials science business.industry Transconductance Silicon on insulator Noise figure Noise (electronics) Electronic Optical and Magnetic Materials Silicon on sapphire Breakdown voltage Optoelectronics Electrical and Electronic Engineering business Microwave
Zdroj:	IEEE Electron Device Letters. 22:92-94
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.902842
Popis:	The dc and microwave results of Si/sub 0.2/Ge/sub 0.8//Si/sub 0.7/Ge/sub 0.3/ pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with L/sub g/=0.1 /spl mu/m displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1/spl times/50 /spl mu/m/sup 2/ devices yielded unity current gain (f/sub T/) and unilateral power gain (f/sub max/) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1/spl times/90 /spl mu/m/sup 2/ devices revealed minimum noise figure (F/sub min/) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.
Databáze:	OpenAIRE
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