Intersubband absorption in highly photoexcited semiconductor quantum wells
| Autor: | Vadim A. Shalygin, Leonid E. Vorobjev, S. Hanna, S. R. Schmidt, A. E. Zhukov, A. Seilmeier, V. M. Ustinov, D. A. Firsov |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Absorption spectroscopy business.industry Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photoexcitation Semiconductor Absorption band Spectral width Optoelectronics Free carrier absorption business Absorption (electromagnetic radiation) Quantum well |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 19:364-371 |
| ISSN: | 1386-9477 |
| Popis: | Transient mid infrared (MIR) absorption spectroscopy is used to investigate transitions between higher electronic subbands in semiconductor quantum well (QW) structures after interband photoexcitation with intense picosecond pulses in the visible spectral range. Our investigation focuses on the e2–e3 intersubband transition in an asymmetric undoped GaAs/AlGaAs QW structure. At an injected nonequilibrium carrier density of 1×1013cm−2/QW, an e2–e3 absorption band at 99meV with a spectral width of 5meV is found. For a higher density studied, 3×1013cm−2/QW, the band is broadened and blueshifted by 30meV. Intersubband absorption signals are distinguished from free-carrier absorption signals in the MIR by their characteristic time behavior. |
| Databáze: | OpenAIRE |
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