Fabrication and characteristics of scaled SONOSFET nonvolatile memory devices for full-featured EEPROMs

Autor:	Joo-Yeon Kim, Seon-Ju Kim, Kwang-Yell Seo, Sung-Bae Lee, Sang-Bae Yi
Rok vydání:	2002
Předmět:	Fabrication Materials science business.industry Electrical engineering Oxide Nitride Non-volatile memory chemistry.chemical_compound chemistry MOSFET Optoelectronics EPROM business Cmos process Quantum tunnelling
Zdroj:	Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials.
DOI:	10.1109/icpadm.1997.616594
Popis:	Scaled SONOSFET nonvolatile memory devices were designed and fabricated using the n-well CMOS process technology with 1.5 /spl mu/m design rule in order to investigate the characteristics of scale-down devices. The ONO gate insulator of fabricated SONOSFETs were formed with a 18 /spl Aring/ tunneling oxide, 38 /spl Aring/ nitride and 37 /spl Aring/ blocking oxide. Memory window of 1.9 V was obtained with write pulse of +7 V, 2 sec and erase pulse of -7 V, 2 sec, and 1 V with /spl plusmn/7 V, 50 msec. Data retention after programming was achieved over 10 years.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::48fe3676755c1d738558d17f3b63f69e https://doi.org/10.1109/icpadm.1997.616594 Zobrazit plný text záznamu