Atomistic investigation on the initial stage of growth and interface formation of Fe on H-terminated Si(111)-(1 × 1) surface
| Autor: | Toyoaki Eguchi, Shozo Suto, Ryo Kawaguchi |
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| Rok vydání: | 2019 |
| Předmět: |
Surface (mathematics)
Materials science Schottky barrier Substrate surface 02 engineering and technology Surfaces and Interfaces Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic units 0104 chemical sciences Surfaces Coatings and Films law.invention Crystallography law Materials Chemistry Thin film Scanning tunneling microscope 0210 nano-technology Spectroscopy |
| Zdroj: | Surface Science. 686:52-57 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2019.04.002 |
| Popis: | The initial growth process of a Fe thin film on a hydrogen-terminated Si(111)-(1 × 1) surface is investigated through direct atomic scale measurements by using scanning tunneling microscopy (STM) and spectroscopy (STS). By depositing Fe onto the substrate at room temperature, nanometer-size Fe clusters having a (111)-oriented body-centered-cubic structure are formed on the substrate surface with maintaining the (1 × 1) structure. As the clusters grow, hill-like structures composed of {110} nano-facets appear on the surface of the Fe clusters. In the empty-state STM image, a depression of the substrate surface is observed at the periphery of a Fe nanocluster. The depression indicates the formation of a Schottky junction between the Fe nanocluster and the substrate surface. |
| Databáze: | OpenAIRE |
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