Effect of bond-angle disorder on the dielectric susceptibility of amorphous semiconductors
| Autor: | Trinath Sahu, N.C. Das, R. N. Acharya |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Permittivity
Materials science Valence (chemistry) Silicon Condensed matter physics business.industry chemistry.chemical_element Germanium Dielectric Condensed Matter Physics Electronic Optical and Magnetic Materials Molecular geometry Semiconductor chemistry Electrical and Electronic Engineering Linear combination business |
| Zdroj: | Physica B: Condensed Matter. 182:213-222 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/0921-4526(92)90579-h |
| Popis: | We formulate a theory for the dielectric constant (e 0 ) of amorphous semiconductors like Si and Ge by analysing e 0 of the model for a tetrahedrally bonded amorphous semiconductor. We adopt a method for the linear combination of hybrids, recently developed by us, to construct the valence and conduction band states and use them to derive an expression for e 0 of the tetrahedral semiconductors in terms of matrix elements between intrasite hybrids and between hybrids of adjacent sites forming a bond. We construct an orthonormal set for the disordered network by introducing distortion in the bond angles and use them to derive an expression for e 0 (Δ) of the model for the amorphous semiconductor in terms of the bond-angle distortion parameter Δ. We analyse e 0 (Δ) and show that there is essentially no change in e 0 (Δ) with an increase in Δ. Our results agree very well with experiment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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