| Autor: |
null Egorov A. Yu., null Novikov I. I., null Karachinsky L. Ya., null Gladyshev A. G., null Ber B.Ya., null Tokarev M. V., null Nevedomsky V. N., null Yunin P. A., null Melnichenko I. A., null Gudovskikh A.S., null Baranov A. I., null Fominykh H.A., null Denisov D.V., null Sobolev M. S., null Pirogov E.V., null Babichev A. V. |
| Rok vydání: |
2022 |
| Zdroj: |
Semiconductors. 56:782 |
| ISSN: |
1726-7315 |
| Popis: |
The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of dark-field images obtained by transmission electron microscopy showed the presence of interdiffusion of InAs into GaAsN. The results of a study of the photoluminescence and electroluminescence spectra at different pump levels are presented. Efficient electroluminescence is demonstrated near 1150 nm with a full width at half-maximum of about ~90 meV. Keywords: Superlattices, molecular beam epitaxy, gallium arsenide, dilute nitride, GaAsN, InAs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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