Frequency increase in pulsed avalanche diodes

Autor: R.N. Wallace, Hermann Statz
Rok vydání: 1979
Předmět:
Zdroj: IEEE Transactions on Electron Devices. 26:1064-1067
ISSN: 0018-9383
DOI: 10.1109/t-ed.1979.19546
Popis: We have tested many GaAs IMPATT diodes under high power pulsed conditions and found that the best power output and efficiency occur at higher frequencies in the pulsed mode than in the CW mode. This phenomenon can be understood by considering the effect on the avalanche region field produced by the space charge of the carriers injected into the drift zone. Qualitative agreement is demonstrated between theory and experiment.
Databáze: OpenAIRE