| Autor: |
James W. Adkisson, V. Kaushal, Qizhi Liu, Renata Camillo-Castillo, Peter B. Gray, Marwan H. Khater, John J. Pekarik, David L. Harame, Adam W. Divergilio, Vibhor Jain, Peng Cheng |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM). |
| DOI: |
10.1109/bctm.2012.6352651 |
| Popis: |
Having two, or more, transistors with different values of f T and BV CEO provides flexibility to circuit designers in making tradeoffs of power and performance. The process complexity and resulting cost of fabricating these transistors on the same wafer is another important factor. Three different approaches for co-integrating high-performance and high-breakdown SiGe npn HBTs with minimal process deviation are presented herein. The work features a high-performance HBT with f T × BV CEO product of 500GHz-V and a high-breakdown HBT with over 430GHz-V integrated on the same wafer with one-mask deviation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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