Revealing two components of oxidant flux for thermal oxidation of silicon contrary to several models
| Autor: | Anis Saad, K. Maser, V. Malyutina-Bronskaya, V.B. Zalesski |
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| Rok vydání: | 2016 |
| Předmět: |
Thermal oxidation
Imagination Work (thermodynamics) Materials science Chemical substance Silicon 020209 energy Mechanical Engineering media_common.quotation_subject Oxide chemistry.chemical_element Nanotechnology 02 engineering and technology Expression (computer science) 01 natural sciences chemistry.chemical_compound chemistry Mechanics of Materials 0103 physical sciences Solid mechanics 0202 electrical engineering electronic engineering information engineering General Materials Science Statistical physics 010306 general physics media_common |
| Zdroj: | Journal of Materials Science. 52:437-445 |
| ISSN: | 1573-4803 0022-2461 |
| Popis: | Thermal oxidation of silicon is usually described by the Deal–Grove model with its linear-parabolic relationship between oxide thickness and time deduced from Evans’ stationary basic approach. In order to improve the relationship, other models add correction terms to the Deal–Grove expression. However, none of these models have gained widespread acceptance as being able to describe all relevant influences. In this work, another approach was chosen where experimental data given by Blanc were used to be fitted to arbitrary functions. This procedure does not involve any hypotheses or models of oxidation. Quite the contrary, the derived coefficients of the fit functions enable conclusions with respect to underlying physical processes. Two main conclusions could be drawn |
| Databáze: | OpenAIRE |
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