An Ultralow Loss Inductorless $dv/dt$ Filter Concept for Medium-Power Voltage Source Motor Drive Converters With SiC Devices
| Autor: | Hans-Peter Nee, Fredrik Botling, Martin Lindahl, Thomas Wiik, Giovanni Zanuso, Georg Bohlin, Erik Velander, Åsa Sandberg |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Transistor Electrical engineering 02 engineering and technology Inductor 01 natural sciences law.invention Switching time Filter (video) law 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Gate driver Electronic engineering Power semiconductor device Voltage source Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Power Electronics. 33:6072-6081 |
| ISSN: | 1941-0107 0885-8993 |
| Popis: | In this paper, a novel $dv/dt$ filter is presented targeted for 100-kW to 1-MW voltage source converters using silicon carbide (SiC) power devices. This concept uses the stray inductance between the power device and the converter output as a filter component in combination with an additional small RC -link. Hence, a lossy, bulky, and costly filter inductor is avoided and the resulting output $dv/dt$ is limited to 5–10 kV/ $\mu$ s independent of the output current and switching speed of the SiC devices. As a consequence, loads with $dv/dt$ constraints, e.g., motor drives can be fed from SiC devices enabling full utilization of their high switching speed. Moreover, a filter-model is proposed for the selection of filter component values for a certain $dv/dt$ requirement. Finally, results are shown using a 300-A 1700-V SiC metal–oxide–semiconductor field-effect transistor ( mosfet ). These results show that the converter output $dv/dt$ can be limited to 7.5 kV/ $\mu$ s even though values up to 47 kV/ $\mu$ s were measured across the SiC mosfet module. Hence, the total switching losses, including the filter losses, are verified to be three times lower compared to when the mosfet $dv/dt$ was slowed down by adjusting the gate driver. |
| Databáze: | OpenAIRE |
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