Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts

Autor:	Johann Martin Spaeth, F. K. Koschnick, Pierre Gibart, F.D. Auret, S. A. Goodman, G. Myburg, Bernard Beaumont
Rok vydání:	1999
Předmět:	Materials science business.industry Band gap Schottky diode Radiation induced Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Cathode ray Electron beam deposition Optoelectronics Electrical and Electronic Engineering business Recombination Deposition (law)
Zdroj:	Physica B: Condensed Matter. :84-87
ISSN:	0921-4526
DOI:	10.1016/s0921-4526(99)00412-3
Popis:	We have used deep-level transient spectroscopy (DLTS) to study the electrical properties of defects introduced in epitaxial n-GaN during electron beam (EB) deposition of Ru Schottky contacts. DLTS revealed that EB deposition introduces at least two defects, Ee1 and Ee2, with energy levels at EC−(0.19±0.01) eV and EC−(0.92±0.04) eV, respectively, in the band gap. The defect Ee1 has a similar signature as a radiation induced defect in GaN, speculated to be the VN. The concentrations of Ee1 and Ee2 both decrease away from the interface into the GaN. The concentration of Ee2, the more prominent of the two defects, is estimated as about 1016 cm−3 at the GaN surface. The effect of the EB deposition induced defects on the current–voltage characteristics of the Schottky contacts thus formed is to introduce recombination and generation components to the reverse and forward currents, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::48b331f44073a3ae999d65e0b06890d1 https://doi.org/10.1016/s0921-4526(99)00412-3 Zobrazit plný text záznamu Full Text from ScienceDirect