An experimental set-up forin situHall measurements under high-energy electron irradiation for wide-bandgap materials

Autor:	C. Coşkun, Zhaoqiang Fang, G. C. Farlow, David C. Look
Rok vydání:	2003
Předmět:	Cryostat Materials science Condensed matter physics Band gap Applied Mathematics Transistor Field strength Heterojunction law.invention Van der Pauw method law Van de Graaff generator Electron beam processing Instrumentation Engineering (miscellaneous)
Zdroj:	Measurement Science and Technology. 15:297-302
ISSN:	1361-6501 0957-0233
DOI:	10.1088/0957-0233/15/1/043
Popis:	A dc Hall-effect apparatus, based on conventional van der Pauw specimen geometry, has been developed for in situ measurements under van de Graaff electron irradiation (0.7–2.2 MeV). An associated cryostat permits ambient temperatures of 95–300 K. A key element is a flat permanent magnet of field strength 3.55 kG. Initial test measurements have been performed on wide-bandgap semiconductor materials, including an HVPE-grown AlGaN/GaN heterostructure field-effect transistor structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::48a5d43dd7ef224d75be1b1ae80f62bc https://doi.org/10.1088/0957-0233/15/1/043 Zobrazit plný text záznamu