Structural and electrical properties of low-angle grain boundaries in silicon

Autor:	P Delavignette, G. Nouet, A. Bary, J.F. Hamet, A. Ihlal
Rok vydání:	2021
Předmět:	Recombination velocity Materials science Silicon chemistry Condensed matter physics Transmission electron microscopy chemistry.chemical_element Grain boundary Electron Diffusion (business) Current (fluid)
DOI:	10.1201/9781003069621-114
Popis:	Low–angle grain boundaries have been analyzed by transmission electron microscopy (TEM) and electron team induced current (EBIC). Diffusion length and interface recombination velocity have been calculated by measuring the area and the variance of the contrast profile by applying the model of Donolato.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4891721938d9d2e62c87a65e8a52ecb7 https://doi.org/10.1201/9781003069621-114 Zobrazit plný text záznamu