A 2 ns 1 Mb CMOS mask ROM
| Autor: | C.H. Kung, I.-C. Liao, Hsiao-Chin Tuan, Kuo-Shu Tseng, M.W.D. Ken, Jyh-Jong Lin, Jinq-Min LIn |
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| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | International Symposium on VLSI Technology, Systems and Applications. |
| DOI: | 10.1109/vtsa.1989.68577 |
| Popis: | A description is given of a high-performance 1-Mb CMOS mask ROM with access time as fast as 29 ns. The fast access is achieved through bit line capacitance reduction, sensitive amplifier design, and the use of double-metal interconnection. Delta-I noise and the electrostatic discharge (ESD) susceptibility problem have been solved. The process and device, cell structure, peripheral circuits, and sense amplifier and output buffer are described. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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