The effects of gas flow rate and annealing on the morphological properties of zinc oxide nanostructures thin film using chemical vapour deposition process
| Autor: | Wei How Khoo, Suhana Mohamed Sultan, M. Z. Sahdan |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Atmospheric pressure Annealing (metallurgy) General Mathematics General Physics and Astronomy chemistry.chemical_element 020207 software engineering Nanotechnology 02 engineering and technology General Chemistry Chemical vapor deposition Zinc Combustion chemical vapor deposition General Biochemistry Genetics and Molecular Biology Field emission microscopy Atomic layer deposition chemistry Chemical engineering 020204 information systems 0202 electrical engineering electronic engineering information engineering Thin film General Agricultural and Biological Sciences |
| Zdroj: | Malaysian Journal of Fundamental and Applied Sciences. 13 |
| ISSN: | 2289-599X 2289-5981 |
| DOI: | 10.11113/mjfas.v13n1.428 |
| Popis: | Zinc Oxide nanostructures thin films have been deposited on glass substrates by using chemical vapour deposition technique at 1000°C assisted by gas blocker. Glass substrates was sputtered by ~5nm of gold to form a catalyst layer on top of glass. Different gas flow rates of 0.05, 0.10, 0.20, 0.40 L/min were used in the deposition. After the deposition, the layer was annealed at temperatures of 500°C for 1 hours under atmospheric pressure. The surface morphologies of ZnO thin film were investigated field emission scanning electron microscope (FESEM). X-ray diffraction (XRD) results confirm the presence of ZnO layer with high peak of (002) crystal orientation and shows improvement after annealing. The mechanism of ZnO nanostructures formation will be discussed in this paper |
| Databáze: | OpenAIRE |
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