The study of emitter thickness effect on the heterostructure emitter bipolar transistors
| Autor: | Chun-Yen Chang, J. S. Tsang, Hou-Ren Chen, K. L. Tsai, C. P. Lee |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Input offset voltage business.industry Heterostructure-emitter bipolar transistor Bipolar junction transistor General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect chemistry.chemical_compound chemistry Ternary compound Physics::Accelerator Physics Optoelectronics Homojunction business Common emitter Voltage |
| Zdroj: | Journal of Applied Physics. 74:1398-1402 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.354898 |
| Popis: | AlGaAs/GaAs heterostructure emitter bipolar transistors were grown with emitter thicknesses varied from 300 to 900 A and the emitter thickness effects on the current gain and offset voltage were studied. It was found that both the current gain and offset voltage are strongly dependent on the emitter thickness. The current gain decreases with increasing emitter thickness. For an emitter thickness smaller than 500 A, the offset voltage decreases with increasing emitter thickness, but for an emitter thickness larger than 500 A, the offset voltage stays at a nearly constant value. Offset voltage as low as 55 mV was obtained for an emitter thickness of 700 A. This low offset voltage, mostly contributed by the geometric effect, indicates that the base‐emitter junction is a homojunction. From the current gain and offset voltage considerations, the optimal emitter thickness was found to be about 300–500 A. |
| Databáze: | OpenAIRE |
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