Bulk-limited Effect in Gradual Conductance Switching Behaviour of HfOx-based Memristive Devices for Analog Synaptic Device Applications
| Autor: | Samuel Chow Chen Wai, Wen Siang Lew, Somsubhra Chakrabarti, Jia Min Ang, Jia Rui Thong, Kunqi Hou, Mun Yin Chee, Desmond Loy Jia Jun, Putu Andhita Dananjaya, Yong Chiang Ee |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Conductance 02 engineering and technology Memristor 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences law.invention Trap (computing) Synapse Neuromorphic engineering Synaptic device law 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | 2020 IEEE Silicon Nanoelectronics Workshop (SNW). |
| Popis: | In this paper, conductance switching behavior of Pt/HfOx/Ti redox-based memristive devices has been thoroughly investigated. The conduction mechanisms involved during the device operation can be associated with the trap-controlled SCL conduction mechanisms. The extracted parameters suggest the gradual switching behavior achieved by the devices was due to the transition between different trap level within trap-fill SCL regime, which is beneficial for the device implementation as analog synapse in the neuromorphic computing platform. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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