Off-state degradation with ac bias in PMOSFET
| Autor: | Jeong-Hoon Oh, Hyuck-Chai Jung, Ilgweon Kim, Gyo-Young Jin, Hyoungsun Hong, Segeun Park, Yonghan Roh |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Switching time Operating temperature Electric field 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics State (computer science) Electrical and Electronic Engineering Current (fluid) Safety Risk Reliability and Quality business Dram Hardware_LOGICDESIGN Degradation (telecommunications) |
| Zdroj: | Microelectronics Reliability. 65:16-19 |
| ISSN: | 0026-2714 |
| Popis: | For the first time, the current failure of p-channel MOSFETs used for the sub-wordline driver of state-of-the-art DRAM chips was investigated during off-state switching cycles. With increasing switching speed for the sub-wordline driver, the subthreshold leakage current of p-channel MOSFETs increased, and resulted in serious stand-by current failure. The model proposed in this work suggested that the off-state degradation of p-channel MOSFETs with ac bias will intensify as the dimensions of devices decrease due to both the high electric field and the high operating frequency. The roles of various device parameters- such as gate length, gate-tab width, doping concentration at the source/drain extensions, operating temperature and operating frequency- on the degradation of p-channel MOSFETs were investigated. |
| Databáze: | OpenAIRE |
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