Radiation damage due to pions and protons in SI-GaAs and their influence on the detector performance
| Autor: | R Göppert, R. Irsigler, N. Duda, M. Battke, R. Geppert, M. Rogalla, A Söldner-Rembold, J. Ludwig, K. Runge, Th. Schmid |
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| Rok vydání: | 1998 |
| Předmět: |
Physics
Nuclear and High Energy Physics Proton Physics::Instrumentation and Detectors Detector Particle detector Gallium arsenide Nuclear physics Condensed Matter::Materials Science chemistry.chemical_compound chemistry Ionization Radiation damage High Energy Physics::Experiment Irradiation Atomic physics Nuclear Experiment Absorption (electromagnetic radiation) Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:41-45 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/s0168-9002(98)00145-4 |
| Popis: | The bulk damage (namely the introduction rate of the arsenic antisite AsGa and its ionization ratio) was determined as a function of the non-ionizing energy loss (NIEL) of hadrons in semi-insulating GaAs. The study was performed using near-infrared absorption on 23 GeV proton and 192 MeV pion irradiated, Liquid Encapsulated Czochralski (LEC) grown GaAs. Together with the detector performance as a function of the radiation level, the results are used to explain the radiation damage in GaAs particle detectors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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