| Autor: |
William R. Deal, Benjamin Heying, W. Sutton, M. Siddiqui, Shih-En Shih, Mike Wojtowicz, Ioulia Smorchkova, YaoChung Chen |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
2007 IEEE Compound Semiconductor Integrated Circuits Symposium. |
| DOI: |
10.1109/csics07.2007.26 |
| Popis: |
This paper presents a broadband low noise amplifier MMIC utilizing 0.2 urn AlGaN/GaN HEMT technology. The single-stage, resistive feedback amplifier is designed in co-planar waveguide (CPW) topology. It uses dual-gate devices with on-chip drain bias network to achieve 18 dB flat gain between 300 MHz -4 GHz. Measured noise figure is around 1.5 dB between 2 and 5 GHz, and better than 2 dB between 1 and 2 GHz. The amplifier is capable of 25 dBm saturated output power with 1 dB compression point around 20 dBm across the band. Due to high breakdown voltage of GaN devices, the LNA can withstand high input power and shows no sign of degradation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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