Si tip arrays with ultra-narrow nanoscale charge transfer channel

Autor:	Ningsheng Xu, S.Z. Deng, Zhangxu Pan, J.C. She
Rok vydání:	2014
Předmět:	Materials science Silicon chemistry business.industry Transfer (computing) Dangling bond Optoelectronics chemistry.chemical_element Charge (physics) Nanotechnology business Nanoscopic scale Communication channel
Zdroj:	2014 27th International Vacuum Nanoelectronics Conference (IVNC).
Popis:	We report a featured device structure of Si tip with ultra-narrow nanoscale charge transfer channel. The nano-channel, as a resistance, was integrated with individual tips to form the hourglass-like structures. Two-terminal current-voltage tests were performed. The result shows that 10-nm-difference in diameter (70 to 80 nm) of the nano-channel can cause a resistance change of two order in magnitude. We propose that the electronegative nano-channel surface with dangling bonds (surface state) may take the account for the effect.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4848d3674e84c6e22e2a6452240c59b6 https://doi.org/10.1109/ivnc.2014.6894766 Zobrazit plný text záznamu