Charge trap analysis of nanolayer Si3N4 and SiO2 by electron irradiation assisted photoelectron emission
| Autor: | Ben Schmidt, Yuri Dekhtyar, Aleksandr Zaslavski, Aleksandr Vilken, Marina Romanova, Gennady Enichek, Tom Yager |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Silicon dioxide Charge (physics) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Trap (computing) chemistry.chemical_compound Silicon nitride chemistry X-ray photoelectron spectroscopy 0103 physical sciences Electron beam processing Optoelectronics Electrical and Electronic Engineering Fourier transform infrared spectroscopy 0210 nano-technology business |
| Zdroj: | Physica B: Condensed Matter. 586:412123 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2020.412123 |
| Popis: | An electron irradiation assisted photoelectron emission technique was developed to study charge traps for nanolayered Si3N4 and SiO2. Sharp emission peaks were induced by electron irradiation, with characteristic energies revealing their microscopic origins. Trap energies, originating from SiO2, were observed to shift depending on the electron irradiation dose and the thickness of Si3N4 nanolayers. Improved understanding of the characteristics of these defects can be informative towards the development of high performance nanocapacitor devices, in addition to furthering understanding of non-volatile memory devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect