Fracto‐emission during the interfacial failure of a metal–oxide‐semiconductor system: Au–SiO2–Si

Autor:	P. Xiong‐Skiba, D. L. Doering, J. T. Dickinson, S. C. Langford
Rok vydání:	1990
Předmět:	Materials science Silicon Oxide chemistry.chemical_element Charge (physics) Nanotechnology Surfaces and Interfaces Electron Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Photon emission Fracture (geology) Adhesive Composite material Thin film
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2401-2406
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.576705
Popis:	Two fracto‐emission components (electron and photon emission) produced by the adhesive failure of gold films peeled in vacuum from oxidized silicon were measured for different oxide thicknesses. The Au adhesive strength was found to decrease with increasing oxide thickness, whereas the fracto‐emission intensities and durations increased significantly with oxide thickness. We interpret these results in terms of interfacial charge created during the formation of the metal–oxide‐semiconductor (MOS) structure, leading to charge separation during fracture and to subsequent charge transport within the MOS structure.
Databáze:	OpenAIRE
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