Investigation of the electrical behavior of an asymmetric MOSFET
| Autor: | Lars Vestling, Tony Ewert, Jögen Olsson |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Field (physics) business.industry media_common.quotation_subject Doping Condensed Matter Physics Asymmetry Atomic and Molecular Physics and Optics Cutoff frequency Surfaces Coatings and Films Electronic Optical and Magnetic Materials Tilt (optics) MOSFET Optoelectronics Breakdown voltage Electrical and Electronic Engineering business media_common |
| Zdroj: | Microelectronic Engineering. 65:428-438 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(03)00054-6 |
| Popis: | In this study a possible approach for improving breakdown voltage while maintaining fT for a MOSFET, is presented. In a conventional MOSFET process with LDD the S/D is implanted with a large tilt angle, which gives an asymmetry due to the shadowing effect by the gate. This asymmetry results in a longer drain-LDD region, which in combination with a lower LDD dose, could reduce the electrical field near the drain pinch-off region. A simulation study for different LDD doses and angles has been performed. It is shown that there exist an optimum range of LDD doses where the asymmetric device has higher figure-of-merit, concerning breakdown voltage and cut-off frequency, than the symmetric MOSFET structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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