Crystallinity and electrical conductivity of sulfur-containing microcrystalline diamond thin film
| Autor: | Yoshitaka Mitsuda, Masao Kamiko, Kenji Nose, R. Fujita, T. Suwa |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Hydrogen sulfide Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Sulfur Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound symbols.namesake Crystallinity Microcrystalline chemistry Electrical resistance and conductance Electrical resistivity and conductivity Phase (matter) Materials Chemistry symbols Raman spectroscopy |
| Zdroj: | Thin Solid Films. 520:4310-4313 |
| ISSN: | 0040-6090 |
| Popis: | Hydrogen sulfide (H 2 S) was introduced into a microwave plasma chemical vapor deposition of microcrystalline diamond thin film. Secondary-ion mass spectroscopy showed that sulfur concentration was controlled from 2 × 10 15 to 9 × 10 17 cm − 3 by controlling the H 2 S/CH 4 ratio, while that of hydrogen concentration was around 5 × 10 20 cm − 3 and was independent of the H 2 S/CH 4 ratio. Electrical conductance increased linearly as the S concentration increased from 2 × 10 15 to 3 × 10 16 cm − 3 without significant deterioration of film crystallinity, i.e., the amount of sp 2 phase did not increase. Non-ohmic conduction was converted to ohmic conduction when the S concentration reached 9 × 10 17 cm − 3 by increasing the H 2 S/CH 4 ratio to 30,000 ppm. This modification was consistent to the formation of a graphitic phase by heavy S-doping, which was identified by Raman spectra and surface morphology. |
| Databáze: | OpenAIRE |
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