Hydrogen Management in Atomic Layer Deposited Al2O3 Film

Autor:	Siareyeva, O., Ernst, M.A.
Jazyk:	angličtina
Rok vydání:	2014
Předmět:	WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY Silicon Solar Cell Improvements
DOI:	10.4229/eupvsec20142014-2av.2.32
Popis:	29th European Photovoltaic Solar Energy Conference and Exhibition; 878-880 In this paper we present a new approach of controlling the passivation properties of Al2O3 films applied in solar industry. Al2O3 film properties are influenced by adjusting ALD process parameters. Limiting hydrogen content is essential for enabling the film to withstand the high temperature firing process. Hydrogen management is an optimal way of improving film thermal stability. Different precursor concentrations result in variation of film composition and hydrogen content in particular. Activation anneal followed by industrial firing is applied to the Al2O3 film in this work. Afterwards the samples are evaluated on implied Voc and minority carrier lifetime, hydrogen content of the film is analyzed by SIMS measurements. Correlation between passivation quality and film composition is analyzed by SIMS after deposition, activation anneal and firing.
Databáze:	OpenAIRE
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