The calibration of process window model for 55-nm node
| Autor: | Irene Yi-Ju Su, Chuen Huei Yang, Chia Wei Huang, Sheng Yuan Huang, Brad Falch, Te Hung Wu, Pei Ru Tsai |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Silicon
business.industry Computer science Process (computing) chemistry.chemical_element law.invention Optics Quality (physics) Optical proximity correction chemistry law Hardware_INTEGRATEDCIRCUITS Electronic engineering Calibration Process window Node (circuits) Photolithography business Lithography |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | In previous OPC model calibrations, most of the work was focused on how to calibrate a model for the best process conditions. With process tolerance decreasing in coming lithography generations, it is increasingly important to be able to predict pattern behavior through process window. Due to a low k1 factor that leads to a smaller process window, the use of process window models is required for both optical proximity correction (OPC) and Lithography Rule Check (LRC) applications to insure silicon success. In this paper, we would try to calibrate multiple process window models. The resulting models will be verified and judged using additional measurement data to demonstrate the quality. |
| Databáze: | OpenAIRE |
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