GERMANIUM ON SAPPHIRE
| Autor: | B.M. Armstrong, S.J.N. Mitchell, Haydn Wadsworth, Harold Gamble, Paul Rainey, Y.H. Low, David McNeill, F.H. Ruddell, Paul Baine |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Transistor chemistry.chemical_element Germanium Integrated circuit Epitaxy Electronic Optical and Magnetic Materials law.invention Silicon on sapphire chemistry Hardware and Architecture law Sapphire Optoelectronics Dissipation factor Wafer Electrical and Electronic Engineering business |
| Zdroj: | International Journal of High Speed Electronics and Systems. 18:805-814 |
| ISSN: | 1793-6438 0129-1564 |
| DOI: | 10.1142/s0129156408005783 |
| Popis: | This paper explores the potential of germanium on sapphire (GeOS) wafers as a universal substrate for System on a Chip (SOC), mm wave integrated circuits (MMICs) and optical imagers. Ge has a lattice constant close to that of GaAs enabling epitaxial growth. Ge , GaAs and sapphire have relatively close temperature coefficients of expansion (TCE), enabling them to be combined without stress problems. Sapphire is transparent over the range 0.17 to 5.5 μm and has a very low loss tangent (α) for frequencies up to 72 GHz. Ge bonding to sapphire substrates has been investigated with regard to micro-voids and electrical quality of the Ge back interface. The advantages of a sapphire substrate for integrated inductors, coplanar waveguides and crosstalk suppression are also highlighted. MOS transistors have been fabricated on GeOS substrates, produced by the Smart-cut process, to illustrate the compatibility of the substrate with device processing. |
| Databáze: | OpenAIRE |
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