Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface
| Autor: | P. A. Alexandrov, K. D. Demakov, S. G. Shemardov, Yu. Yu. Kuznetsov |
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| Rok vydání: | 2010 |
| Předmět: |
inorganic chemicals
Materials science Silicon business.industry Annealing (metallurgy) technology industry and agriculture Nanocrystalline silicon Recrystallization (metallurgy) chemistry.chemical_element equipment and supplies Condensed Matter Physics complex mixtures Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Monocrystalline silicon stomatognathic diseases Crystallography chemistry Silicon on sapphire Sapphire Optoelectronics business |
| Zdroj: | Semiconductors. 44:1386-1388 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782610100258 |
| Popis: | The use of the process of solid-phase recrystallization reduces to a great extent the number of defects in the silicon layer. An amorphous layer was formed by implantation of silicon ions. The crystalline quality of the SOS structures has been assessed by the method of high-resolution double-crystal X-ray diffraction. Silicon layers with a thickness d = 1000-2500 A and a high crystalline quality have been obtained after implantation of 150-keV silicon ions with subsequent high-temperature annealing. |
| Databáze: | OpenAIRE |
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