Low temperature transport properties of InAs/GaAs structures with quantum dots
| Autor: | V. A. Kulbachinskii, R. A. Lunin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, Vladimir G. Kytin |
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| Rok vydání: | 1998 |
| Předmět: |
Photoluminescence
Condensed matter physics Magnetoresistance Chemistry Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Shubnikov–de Haas effect Surfaces Coatings and Films Electronic Optical and Magnetic Materials Magnetic field Hall effect Quantum dot Electrical and Electronic Engineering Anisotropy |
| Zdroj: | Microelectronic Engineering. :107-111 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(98)00228-7 |
| Popis: | The transport and optical properties of InAs/GaAs structures with quantum dots have been investigated as a function of InAs content. Photoluminescence (PL) spectra showed polarization of radiation in the plane of the structures. The temperature dependence of the resistance was measured in the [110] and [−110] directions in the temperature range 4.2 K–300 K and anisotropy of conductivity was found. The Shubnikov de Haas effect, magnetoresistance ρ ( B ) and the Hall effect have been measured in a magnetic field B up to 10 T. |
| Databáze: | OpenAIRE |
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