Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
| Autor: | A. V. Sankin, V. I. Altuhov, I. S. Kas’yanenko, Alexander Sigov, B. A. Bilalov |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Metal alloy Schottky defect Schottky barrier Fermi level 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Metal–semiconductor junction 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Nonlinear system symbols.namesake chemistry.chemical_compound chemistry Current voltage Computational chemistry 0103 physical sciences symbols Silicon carbide 0210 nano-technology |
| Zdroj: | Semiconductors. 50:1168-1172 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616090025 |
| Popis: | A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)1–x (AlN) x structures. The results of calculations are compared to experimental data. |
| Databáze: | OpenAIRE |
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