Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 thin films by selenization of metal precursors

Autor:	Takashi Yamamoto, S. Ando, Hachiro Nakanishi, M. Nakamura, S. F. Chichibu, J. Ishizuki, T. Deguchi
Rok vydání:	2003
Předmět:	Photoluminescence Materials science Chalcopyrite Semiconductor materials Inorganic chemistry Crystal growth General Chemistry Condensed Matter Physics Metal visual_art visual_art.visual_art_medium General Materials Science Thin film Leakage (electronics)
Zdroj:	Journal of Physics and Chemistry of Solids. 64:1855-1858
ISSN:	0022-3697
Popis:	A less-hazardous and low cost selenization method for the preparation of CuInSe 2 films was demonstrated using diethylselenide [(C 2 H 5 ) 2 Se:DESe] as a Se source alternative to H 2 Se. By using N 2 as a carrier gas, potential H 2 leakage risk was removed from our previous work [J. Cryst. Growth 243 (2002) 404]. The structural and optical properties of CuInSe 2 films fabricated by this method were found to be almost equal to those of the films prepared by the selenization process using DESe/H 2 system.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4801912e93efd9e83f4956fe0e60e5d6 https://doi.org/10.1016/s0022-3697(03)00146-x Zobrazit plný text záznamu Full Text from ScienceDirect