Kinetic modelling of the H2O2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device
| Autor: | Joakim Fogelberg, L.-G. Petersson |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Steric effects
Hydrogen Chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Photochemistry Oxygen Dissociation (chemistry) Surfaces Coatings and Films Catalysis Metal Reaction rate Adsorption visual_art Materials Chemistry visual_art.visual_art_medium Physical chemistry |
| Zdroj: | Surface Science. 350:91-102 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/0039-6028(96)80059-8 |
| Popis: | We have established a model for the water forming reaction on Pd in the temperature range 350–475 K. Importantly, the model takes into account the possibility that hydrogen may absorb and adsorb at interface sites on supported Pd catalysts. It is shown that already at modest conditions interface adsorption may significantly affect reaction rates. The model may also be used to quantify the response of a hydrogen sensitive Pd-MOS device during hydrogen sensing in oxygen. In the case of Pd supported on SiO2, the concentration of interface sites is so low that interface hydrogen adsorption will have only a minor influence on a catalytic reaction. The fact that a Pd-MOS device may be used as a very sensitive hydrogen detector at atmospheric oxygen conditions, despite a steric oxygen blocking of hydrogen dissociation sites, is predicted by the model. |
| Databáze: | OpenAIRE |
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