The Effect of Impurities on the Thermoelectric Properties of Bi, Te, and Se at Phase Transitions

Autor:	Ya. I. Dutchak, V. Ya. Prokhorenko, I. P. Klyus
Rok vydání:	1969
Předmět:	Phase transition Materials science Condensed matter physics Dopant Impurity Semiconductor properties Doping Thermoelectric effect Analytical chemistry Atmospheric temperature range Condensed Matter Physics Electronic Optical and Magnetic Materials Amorphous solid
Zdroj:	physica status solidi (b). 31:25-29
ISSN:	1521-3951 0370-1972
Popis:	The thermo e.m.f. of Zn, Ga, In, Sn, and Bi doped (1 and 1.5 wt%) Bi, Te, and Se is investigated over a large temperature range using solid as well as liquid samples (for Se the amorphous state is also included). The dopants Zn, Ga, In, and Sn strongly affect the thermo e.m.f. of solid but not of liquid Bi. Liquid Te and Se are found to show semiconductor properties determined strongly by impurities, especially for Se. The change in the sign of the thermo e.m.f. of liquid Se is explained by the existence of oxygen atoms acting as acceptors. [Russian text Ignored]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::47edfe4bdad5f903272cab367859cc95 https://doi.org/10.1002/pssb.19690310104 Zobrazit plný text záznamu Plný text