| Autor: |
D. Rajavel, Jennifer J. Zinck, John E. Jensen |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 138:19-27 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(94)90774-9 |
| Popis: |
Thermally pre-cracked diethylzinc and diethylselenide were used for the metalorganic molecular beam epitaxial growth of (001) ZnSe films on (001) GaAs substrates. The growth kinetics of (001) ZnSe was studied by measuring the growth rate as a function of the substrate temperature and the II/VI flux ratio. Arrhenius plot of the Se-limited growth rate indicated an activation energy of 0.08 eV for the desorption of the Se species using Se and Se2 species for ZnSe growth. Triallylamine, allylamine, tertiary-butylamine and ammonia were evaluated as sources for the N doping of ZnSe. Secondary ion mass spectrometry measurements were used to determine the impurity concentrations. When the amines were pre-cracked in the cracker cell, N concentrations in excess of 1x1019 cm-3 were incorporated in films grown at ≤225°C. The N concentration decreased sharply with increased substrate temperature. Large concentrations of C and H were measured in films doped using the amines, and correlated with N concentrations; with ammonia, high H concentrations were observed and also correlated with the N concentration. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
