Study of Optical, Electrochemical, and Morphological Properties of MoS2 Thin Films Prepared by Thermal Evaporation
| Autor: | M. R. Khanlary, Mohammad Shahbazi |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Physics
Photoluminescence 010308 nuclear & particles physics Annealing (metallurgy) Analytical chemistry General Physics and Astronomy 01 natural sciences chemistry.chemical_compound symbols.namesake chemistry Physical vapor deposition 0103 physical sciences symbols Thin film 010306 general physics Raman spectroscopy Spectroscopy Molybdenum disulfide Raman scattering |
| Zdroj: | Brazilian Journal of Physics. 51:1182-1190 |
| ISSN: | 1678-4448 0103-9733 |
| DOI: | 10.1007/s13538-021-00917-4 |
| Popis: | In the present study, molybdenum disulfide (MoS2) thin films were synthesized by the physical vapor deposition (PVD) method thermal evaporation on quartz substrates. We have synthesized the films on substrates, at room temperature. Some of the films were annealed at 1000 °C at atmospheric pressure before analyzing. The optical properties of MoS2 films are investigated using UV-Vis spectroscopy as well as photoluminescence (PL) analysis. Relatively high transparency of the films is observed from the recorded UV-visible transmission spectrum. From these spectra, the bandgap of the prepared few-layered MoS2 is estimated at 1.78 eV. PL spectra of MoS2 emissions are also discussed. We have used Raman scattering analysis to study the effect of annealing on the vibrational modes of layered MoS2. By annealing the prepared films, we have detected some remarkable shifts in the main Raman peaks. Atomic force microscopy (AFM) analysis is performed to investigate the surface morphology of the MoS2 films. We have also reported and discussed the electrochemical properties of the MoS2 layers. The resistance charge transfer for molybdenum disulfide is calculated to be 277 Ω. |
| Databáze: | OpenAIRE |
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