| Popis: |
In this study, X-ray diffraction peaks of Si, Ti, Au and ZnO grown on Ge substrate with thickness of 500 nm by using sputtering method are analyzed to determine correlation length and dislocation density. It is seen that in most dense region of peaks, peak behaviour is in accordance with Gauss function. Right and left tails of peaks are in good accordance with q3 law. For randomized dislocations, obeying q3 law is typical and they can be monitored with w-scans by using open detectors. Whole profile is fitted with a limited dislocation dispersion. Edge dislocation density and correlation length are determined in the degree of 1010cm-2 and 103 nm, respectively. In order to gain these values, semi-experimental equations in Kragner method are used. For making a good fit, fit iteration step is taken as 9x106. |
