| Autor: |
H. K. Yow, R.M. Manickam, R. Balachandran, V Saaminathan |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
2006 IEEE International Conference on Semiconductor Electronics. |
| DOI: |
10.1109/smelec.2006.380792 |
| Popis: |
In this simulation research work, the metal-composite-metal (MCM) multilayer capacitor structure [Pt/BST/Ni-Fe/Cu] is proposed with barium strontium titanate (BST) oxide material as the capacitor dielectric material for DRAM with permalloy nickel-ferrous (Ni-Fe) coated copper (Cu) as the bottom conducting electrode and platinum as the top conducting electrode. This proposed MCM consists of 120 mum Cu bottom contact material, a 1 mum of Ni-Fe alloy over the stoichiometric composition of the BST oxide dielectric material of thickness 40 nm and dielectric constant of 775. The MCM structure is expected to deliver a maximum charge storage capacity of 109.75 fF for a capacitor in DRAM cell area of 0.64 mum2 well above the minimum requirement for DRAM cell. The leakage current density for a variation of voltage from 0 to 10 V has been simulated for temperature variation. When compared with the previous report, the proposed multi layer capacitor (MLC) structure shows promising potentials in terms of dielectric characteristics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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