Effect of SiC crystal orientation on Ti3SiC2formation between SiC and Al/Ti bi-layered film
| Autor: | Masato Tsutaoka, Yasuo Takahashi, Masakatsu Maeda |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Process Chemistry and Technology Polishing 02 engineering and technology Sputter deposition 021001 nanoscience & nanotechnology Epitaxy Microstructure 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Transmission electron microscopy 0103 physical sciences Materials Chemistry Ceramics and Composites Wafer Wafer dicing Composite material 0210 nano-technology |
| Zdroj: | Ceramics International. 47:7753-7763 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2020.11.120 |
| Popis: | The present study was performed to understand the interfacial reaction between Al/Ti bi-layered films and 4H–SiC with various surface orientations and the preferential growth orientation of Ti3SiC2 crystals. To this end, n-type 4H–SiC crystals oriented to the (0001), (1 1 ‾ 00), and (11 2 ‾ 0) surfaces were prepared. The (0001) and (11 2 ‾ 0) surfaces of the p-type 4H–SiC were composed of commercially available p-type 4H–SiC wafers; these surfaces were tilted by 8° from (0001) towards [11 2 ‾ 0] by the dicing and polishing of the wafers. Using the same method, another surface orientation was achieved wherein the surface was tilted by 30° from (11 2 ‾ 0) towards [0001]. Further, Al/Ti bi-layered films were deposited on each SiC substrate, using the radio-frequency magnetron sputtering method, which was followed by the stepwise annealing. The microstructures were examined by X-ray diffractometry and transmission electron microscopy. The Ti3SiC2 phase grew epitaxially in the [11 2 ‾ 0]SiC orientation on the (0001) surface of 4H–SiC. Ti3SiC2 phase did not grow uniformly on the other SiC surfaces that were oriented to (1 1 ‾ 00) or (11 2 ‾ 0). The Ti3SiC2 phase growth was columnar and parallel to (0001)SiC in the [11 2 ‾ 0]SiC orientation on the SiC surface tilted by 30° from (11 2 ‾ 0) towards [0001]. The electrical characteristics of p-type 4H–SiC contact films measured before and after annealing revealed that the characteristics of Al/Ti/(11 2 ‾ 0)4H–SiC were improved after annealing. |
| Databáze: | OpenAIRE |
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