1.4× efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (⩽2000 Å) active regions

Autor:	T. S. Tan, S. A. Stockman, Nathan F. Gardner, J.-W. Huang, F. A. Kish, Michael R. Krames, Herman C Chui, C. P. Kocot, N. Moll, E. I. Chen
Rok vydání:	1999
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Substrate (electronics) law.invention Active layer Optics law Optoelectronics Quantum efficiency business Luminous efficacy Light-emitting diode Diode
Zdroj:	Applied Physics Letters. 74:2230-2232
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.123810
Popis:	Improvement of 1.4× in the external quantum efficiency and luminous efficiency (lm/W) of transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes is demonstrated. The improvement is accomplished by reducing the thickness of the active layer to ⩽2000 A and increasing the internal quantum efficiency by using multiple thin (⩽500 A) active layers. The maximum luminous efficiency achieved is 73.7 lm/W at λp∼615 nm and the maximum external quantum efficiency is 32.0% at λp∼632 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::47dac76a2304ee20cf7bf28a84f77d1c https://doi.org/10.1063/1.123810 Zobrazit plný text záznamu