High temperature physical modeling and verification of 4H-SiC lateral JFET device

Autor:	Kuang Sheng, Tao Wang, Qing Guo, Zhong Xueqian
Rok vydání:	2011
Předmět:	chemistry.chemical_compound Materials science chemistry Computer simulation Logic gate Electronic engineering Wide-bandgap semiconductor Silicon carbide Mechanical engineering JFET Electronics Temperature measurement Finite element method
Zdroj:	2011 2nd International Conference on Artificial Intelligence, Management Science and Electronic Commerce (AIMSEC).
DOI:	10.1109/aimsec.2011.6010044
Popis:	Silicon Carbide (SiC) lateral JFET (LJFET) has drawn significant attentions due to its excellent performance in high-temperature and high-frequency electronics applications. This paper establishes a comprehensive physical model, including both DC and AC characteristics, for 4H-SiC lateral JFET at room temperature and high temperature (300°C). Finite element numerical simulation and experimental measurement are carried out to verify the validity of the established physical model. Good agreements have been achieved among these three sets of results. For the first time, the modeling work studied the detailed operating mechanism and provided valuable design guidelines for SiC LJFET device at temperature as high as 300°C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::47d9555b770560e7b4018b05d3f02685 https://doi.org/10.1109/aimsec.2011.6010044 Zobrazit plný text záznamu