Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device
| Autor: | Ryota Katsumata, Yosuke Komori, Y. Nagata, Megumi Ishiduki, Masaru Kito, Hideaki Aochi, Hiroyasu Tanaka, Akihiro Nitayama, Yoshiaki Fukuzumi, M. Kido |
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| Rok vydání: | 2008 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Flash memory Non-volatile memory Stack (abstract data type) Logic gate Charge trap flash Electronic engineering Optoelectronics Racetrack memory Non-volatile random-access memory Hardware_ARITHMETICANDLOGICSTRUCTURES business Block (data storage) |
| Zdroj: | 2008 IEEE International Electron Devices Meeting. |
| DOI: | 10.1109/iedm.2008.4796831 |
| Popis: | Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory. |
| Databáze: | OpenAIRE |
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