Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates
| Autor: | Nelson Tansu, Elia Palmese, Jonathan J. Wierer, Xiongliang Wei, Haotian Xue, Syed Ahmed Al Muyeed, Renbo Song |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Near-infrared spectroscopy 02 engineering and technology Electroluminescence 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Template Quantum dot 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | Photonics Research. 10:33 |
| ISSN: | 2327-9125 |
| DOI: | 10.1364/prj.441122 |
| Popis: | Near-infrared electroluminescence of InGaN quantum dots (QDs) formed by controlled growth on photoelectrochemical (PEC) etched QD templates is demonstrated. The QD template consists of PEC InGaN QDs with high density and controlled sizes, an AlGaN capping layer to protect the QDs, and a GaN barrier layer to planarize the surface. Scanning transmission electron microscopy (STEM) of Stranski–Krastanov (SK) growth on the QD template shows high-In-content InGaN QDs that align vertically to the PEC QDs due to localized strain. A high-Al-content Al 0.9 Ga 0.1 N capping layer prevents the collapse of the SK QDs due to intermixing or decomposition during higher temperature GaN growth as verified by STEM. Growth of low-temperature (830°C) p-type layers is used to complete the p-n junction and further ensure QD integrity. Finally, electroluminescence shows a significant wavelength shift (800 nm to 500 nm), caused by the SK QDs’ tall height, high In content, and strong polarization-induced electric fields. |
| Databáze: | OpenAIRE |
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