Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
| Autor: | Hyejung Choi, Myoung-Jae Lee, Sunae Seo, Hyunjun Sim, Hyunsang Hwang, Inkyung Yoo, Dongsoo Lee, Dooho Choi |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Electrical engineering Analytical chemistry Oxide Sputter deposition Electronic Optical and Magnetic Materials Non-volatile memory chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Sputtering Electrical and Electronic Engineering Thin film business Layer (electronics) Stoichiometry |
| Zdroj: | IEEE Electron Device Letters. 26:719-721 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2005.854397 |
| Popis: | The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrO/sub x//p/sup +/-Si sandwich structure fabricated by reactive sputtering shows two stable resistance states. By applying proper bias, resistance switching from one to another state can be obtained. The composition in ZrO/sub x/ thin films were confirmed from X-ray photoelectron spectroscope (XPS) analysis, which showed three layers such as top stoichiometric ZrO/sub 2/ layer with high resistance, transition region with medium resistance, and conducting ZrO/sub x/ bulk layer. The resistance switching can be explained by electron trapping and detrapping of excess Zr/sup +/ ions in transition layer which control the distribution of electric field inside the oxide, and, hence the current flow. |
| Databáze: | OpenAIRE |
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