HfO2 gate dielectric with 0.5 nm equivalent oxide thickness

Autor:	H.R. Harris, Sergey A. Nikishin, S. Gangopadhyay, N. Mehta, Nivedita Biswas, Henryk Temkin, Kisik Choi, A. Chandolu, G. Kipshidze
Rok vydání:	2002
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Hydrogen Gate dielectric Analytical chemistry chemistry.chemical_element Equivalent oxide thickness Dielectric Electron beam physical vapor deposition chemistry.chemical_compound chemistry Thin film Hafnium dioxide
Zdroj:	Applied Physics Letters. 81:1065-1067
ISSN:	1077-3118 0003-6951
Popis:	Hafnium dioxide films have been deposited using reactive electron beam evaporation in oxygen on hydrogenated Si(100) surfaces. The capacitance–voltage curves of as-deposited metal(Ti)–insulator–semiconductor structures exhibited large hysteresis and frequency dispersion. With post-deposition annealing in hydrogen at 300 °C, the frequency dispersion decreased to less than 1%/decade, while the hysteresis was reduced to 20 mV at flatband. An equivalent oxide thickness of 0.5 nm was achieved for HfO2 thickness of 3.0 nm. We attribute this result to a combination of pristine hydrogen saturated silicon surfaces, room temperature dielectric deposition, and low temperature hydrogen annealing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::47ae4b8e151a325e51d2763352c93fb7 https://doi.org/10.1063/1.1495882 Zobrazit plný text záznamu