Device Simulations for Ultrahigh-Speed and High-Voltage Image Sensors
| Autor: | Hideki Mutoh |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Electromagnetic field Physics Electromagnetics Field (physics) High voltage 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Hardware_GENERAL Logic gate 0103 physical sciences Electronic engineering Electric potential Electrical and Electronic Engineering Image sensor 0210 nano-technology Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 63:49-56 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2015.2442435 |
| Popis: | Physical models and algorithms for use in device simulations of ultrahigh-speed and high-voltage image sensors are reported. In the analyses of ultrahigh-speed image sensors, propagation of the electromagnetic field induced by electrodes cannot be ignored. To obtain consistent basic equations for both the device and electromagnetic field propagation simulations, we introduce a Nakanishi–Lautrup field from quantum electrodynamics into the electromagnetic field model. To perform current analyses for high-voltage image sensors with applied voltages of >35 V, we adopt quad precision numbers for all parameters. The models and algorithms are reported, and some computational results are presented. |
| Databáze: | OpenAIRE |
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