Intensity variation of photoluminescence in InxGa1−xAs/GaAs multi‐quantum‐well structures
| Autor: | S. S. Cha, K. Y. Lim, H. I. Jeon, Z. S. Piao, H. J. Lee, E.‐K. Suh |
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| Rok vydání: | 1994 |
| Předmět: |
Condensed Matter::Quantum Gases
Photoluminescence Physics and Astronomy (miscellaneous) Condensed matter physics Condensed Matter::Other Chemistry Band gap Relaxation (NMR) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Barrier layer Condensed Matter::Materials Science Picosecond Diffusion (business) Excitation Quantum well |
| Zdroj: | Applied Physics Letters. 65:333-335 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.112362 |
| Popis: | We studied the influence of the sample structure on the photoluminescence intensity in terms of carrier diffusion and transfer phenomena in InxGa1−xAs/GaAs multi‐quantum‐well structures. Carrier injection from the barrier, cap, or buffer layers dominates the generation in the well when the well thicknesses are small and the excitation energy is larger than the band gap of the barrier layer. The carrier transport between wells also plays an important role in the photoluminescence particularly in the shallow wells and can be accounted for by phenomenologically introduced hopping time between wells. The hopping time varies from a few tens of picoseconds to a few hundreds of nanoseconds depending on the well composition and width. The strain relaxation of these strained layer quantum‐well structures also leads to the intensity variation as well as the change in the peak position. |
| Databáze: | OpenAIRE |
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