Comparison of single event transients in AlGaN/GaN Schottky-gate and MIS-gate HEMTs using single-photon absorption and focused X-ray techniques

Autor:	Joseph S. Melinger, Nathan P. Wells, Petras Karuza, J. P. Bonsall, Dale Brewe, Andrew D. Koehler, Travis J. Anderson, Nicolas J.-H. Roche, Steven C. Moss, Stephen P. Buchner, E. C. Dillingham, William T. Lotshaw, Dale McMorrow, Paul D. Cunningham, Michael A. Tockstein, Jeffrey H. Warner, Ani Khachatrian, S. D. LaLumondiere
Rok vydání:	2016
Předmět:	Materials science 010308 nuclear & particles physics business.industry Wide-bandgap semiconductor X-ray Single photon absorption Algan gan medicine.disease_cause 01 natural sciences Logic gate 0103 physical sciences medicine Optoelectronics business Event (particle physics) Beam (structure) Ultraviolet
Zdroj:	2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Popis:	Single Photon Absorption technique with ultraviolet pulsed laser and focused X-ray beam is used to investigate single event transients in pristine AlGaN/GaN Schottky-Gate and MIS-Gate HEMTs. The results depend strongly on structure of devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::479596e81faaaa0f0187b06799686113 https://doi.org/10.1109/radecs.2016.8093196 Zobrazit plný text záznamu