Formation of a donor profile in silicon upon simultaneous implantation of phosphorus and sodium ions

Autor:	S. A. Vedenyapin, V. M. Korol, V. P. Astakhov, A. V. Zastavnoi
Rok vydání:	2011
Předmět:	Free electron model Materials science Silicon Phosphorus Sodium Diffusion Doping Inorganic chemistry technology industry and agriculture Analytical chemistry chemistry.chemical_element Surfaces Coatings and Films Ion chemistry Thin film
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:358-361
ISSN:	1819-7094 1027-4510
Popis:	A four-point probe method was used to study, as the layers were removed consecutively, the concentration distribution profiles of free electrons in high-resistivity p-Si with implanted P+ and Na+ ions. Anodic oxidation was used to remove layers at a depth of less than 1 μm, and polishing at larger depths. It was shown that the efficiency of diffusion doping of silicon with sodium is determined, to a large extent, by the ratio between the energies of P+ and Na+ ions. If the conditions are optimal, the efficiency of doping by simultaneous implantation of sodium and phosphorus ions is better (by a factor of 2.5 on the average) than that of doping with Na+ ions only.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4794d9e591c02f179c6d9eb0fd290e15 https://doi.org/10.1134/s1027451011040100 Zobrazit plný text záznamu Full text from SpringerLink